All MOSFET. STD16N50M2 Datasheet

 

STD16N50M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD16N50M2

Marking Code: 16N50M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19.5 nC

Rise Time (tr): 7.6 nS

Drain-Source Capacitance (Cd): 44 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: DPAK

STD16N50M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD16N50M2 Datasheet (PDF)

1.1. std16n50m2 stf16n50m2 stp16n50m2.pdf Size:1255K _st

STD16N50M2
STD16N50M2

STD16N50M2, STF16N50M2, STP16N50M2 N-channel 500 V, 0.24 Ω typ.,13 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - preliminary data Features TAB 3 Order codes VDS @ TJmax RDS(on) max. ID 1 DPAK STD16N50M2 STF16N50M2 550 V 0.28 Ω 13 A STP16N50M2 TAB • Extremely low gate charge • Excellent output capacitance (Coss) profile 3 3 2 2 • 10

4.1. stb16n65m5 std16n65m5.pdf Size:1032K _st

STD16N50M2
STD16N50M2

STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK Features VDSS @ RDS(on) Type ID TJmax max. STB16N65M5 710 V < 0.299 Ω 12 A STD16N65M5 3 3 1 1 ■ DPAK worldwide best RDS(on) DPAK D²PAK ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Figure 1.

4.2. std16n65m2.pdf Size:938K _st

STD16N50M2
STD16N50M2

STD16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID TAB STD16N65M2 710 V 0.36 Ω 11 A • Extremely low gate charge 3 2 • Excellent output capacitance (Coss) profile 1 • 100% avalanche tested • Zener-protected DPAK Applications • Switching applications Fig

 4.3. std16nf25 stf16nf25 stp16nf25.pdf Size:466K _st

STD16N50M2
STD16N50M2

STD16NF25 STF16NF25 - STP16NF25 N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET Features RDS(on) Type VDSS ID Pw Max 3 STD16NF25 250V <0.235Ω 13A 90W 1 3 2 STF16NF25 250V <0.235Ω 13A(1) 25W 1 DPAK STP16NF25 250V <0.235Ω 13A 90W TO-220 1. Limited only by maximum temperature allowed ■ Exceptional dv/dt capability 3 2

4.4. std16ne06l-1.pdf Size:55K _st

STD16N50M2
STD16N50M2

STD16NE06L-1 ® N - CHANNEL 60V - 0.07 Ω - 16A - TO-251 STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD16NE06L-1 60 V < 0.085 Ω 16 A TYPICAL R = 0.07 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 DESCRIPTION DPAK This Power Mosfet is the latest development of TO-251

 4.5. std16nf06t4.pdf Size:688K _st

STD16N50M2
STD16N50M2

STD16NF06 N-Channel 60V - 0.060Ω - 16A - DPAK STripFET™ II Power MOSFET General features VDSS RDS(on) ID Type STD16NF06 60V <0.070Ω 16A 3 ■ Typical RDS(on) = 0.060Ω 1 DPAK ■ Exceptional dv/dt Capability TO-252 ■ 100% Avalanche Tested ■ Application Oriented Characterization Description Internal schematic diagram This Power MOSFET is the latest development of

4.6. std16nf06.pdf Size:696K _st

STD16N50M2
STD16N50M2

STD16NF06 N-Channel 60V - 0.060Ω - 16A - DPAK STripFET™ II Power MOSFET General features VDSS RDS(on) ID Type STD16NF06 60V <0.070Ω 16A 3 ■ Typical RDS(on) = 0.060Ω 1 DPAK ■ Exceptional dv/dt Capability TO-252 ■ 100% Avalanche Tested ■ Application Oriented Characterization Description Internal schematic diagram This Power MOSFET is the latest development of

4.7. std16ne06l-.pdf Size:55K _st

STD16N50M2
STD16N50M2

STD16NE06L ® N - CHANNEL 60V - 0.07 Ω - 16A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD16NE06L 60 V < 0.085 Ω 16 A TYPICAL R = 0.07 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED 3 CHARACTERIZATION FOR TAPE & REEL AND OTHER 1 PACKAGING OPTIONS CONTACT SALES DPAK OFFICES T

4.8. std16ne10.pdf Size:88K _st

STD16N50M2
STD16N50M2

STD16NE10  N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK STripFET MOSFET TYPE VDSS RDS(on) ID STD16NE10 100 V < 0.1 Ω 16 A TYPICAL R = 0.07 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 3 2 THROUG-HOLE IPAK (TO-251) POWER 1 1 PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DP

4.9. std16nf06l-1.pdf Size:356K _st

STD16N50M2
STD16N50M2

STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A 3 3 2 1 1 ■ Logic level device iPAK ■ Low threshold drive DPAK Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-b

4.10. std16n60m2.pdf Size:440K _st

STD16N50M2
STD16N50M2

STD16N60M2 N-channel 600 V, 0.280 Ω typ., 12 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD16N60M2 600 V 0.320 Ω 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Figure 1: Internal schematic diagram Applications D(

4.11. std16nf06l-1 std16nf06lt4.pdf Size:350K _st

STD16N50M2
STD16N50M2

STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A 3 3 2 1 1 ■ Logic level device iPAK ■ Low threshold drive DPAK Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-b

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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