IXFM7N80 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFM7N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO204
IXFM7N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFM7N80 Datasheet (PDF)
Datasheet: IXFM35N30 , IXFM40N30 , IXFM42N20 , IXFM50N20 , IXFM67N10 , IXFM6N100 , IXFM6N90 , IXFM75N10 , MMIS60R580P , IXFN100N25 , IXFN106N20 , IXFN110N20 , IXFN120N20 , IXFN130N30 , IXFN150N15 , IXFN170N10 , IXFN180N07 .
