All MOSFET. IXFN110N20 Datasheet

 

IXFN110N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFN110N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 600 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SOT227B

IXFN110N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN110N20 Datasheet (PDF)

1.1. ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf Size:395K _ixys

IXFN110N20
IXFN110N20

This datasheet has been downloaded from http://www.digchip.com at this page

5.1. ixfn150n15.pdf Size:70K _ixys

IXFN110N20
IXFN110N20

HiPerFETTM IXFN 150N15 VDSS = 150 V ID25 = 150 A Power MOSFET RDS(on) = 12.5 mW Single MOSFET Die trr ? 250 ns Preliminary data sheet miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25C to 150C 150 V S VDGR TJ = 25C to 150C, RGS = 1MW 150 V G VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 150 A S IL(RMS) Terminal (current limit) 1

5.2. ixfn180n15p.pdf Size:152K _ixys

IXFN110N20
IXFN110N20

VDSS = 150 V IXFN 180N15P PolarHTTM HiPerFET ID25 = 150 A Power MOSFET ? ? ? ? RDS(on) ? 11 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated ? trr ? ? 200 ns ? ? Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 175 C 150 V S VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V G VDSS Continuous 20 V VGSM Tra

 5.3. ixfn100n10s1-s2-s3.pdf Size:99K _ixys

IXFN110N20
IXFN110N20

HiPerFETTM Power MOSFETs IXFN 100N10S1 VDSS = 100 V IXFN 100N10S2 with Schottky Diodes ID25 = 100 A IXFN 100N10S3 Ω RDS(on) = 15 mΩ Ω Ω Ω m~ê~ääÉäI=_ìÅâ=C==_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S2 QEaF QEaF S1 S3 QEaF PEhF NEdF NEdF NEdF PE^F OEpF OEpF OIPEpF Symbol Test Conditions Maximum Rati

5.4. ixfn140n20p.pdf Size:92K _ixys

IXFN110N20
IXFN110N20

VDSS = 200 V IXFN 140N20P PolarHTTM HiPerFET ID25 = 115 A Power MOSFET ? ? RDS(on) ? 18 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 150 ns ? ? Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25C to 175C; RGS = 1 M? 200 V E153432 VGS Continuous 20 V S VGSM Transient 30 V G ID25 TC

 5.5. ixfk170n10 ixfn170n10.pdf Size:144K _ixys

IXFN110N20
IXFN110N20

VDSS ID25 RDS(on) trr HiPerFETTM IXFN170N10 100V 170A 10mW 200ns Power MOSFET IXFK170N10 100V 170A 10mW 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 G D (TAB) VDSS TJ = 25°C to 150°C 100 100 V D S VDGR TJ = 25°C to 150°C 100 100 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V miniBLOC, SO

5.6. ixfn180n07 ixfn200n07 ixfn200n06.pdf Size:190K _ixys

IXFN110N20
IXFN110N20

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 mW Power MOSFETs IXFN 180 N07 70 V 180 A 7 mW IXFN 200 N07 70 V 200 A 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C N07 70 V N06 60 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW N07 70 V G N06

5.7. ixfk90n20 ixfn100n20 ixfn106n20.pdf Size:111K _ixys

IXFN110N20
IXFN110N20

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25°C to 150°C 200 200 200 V G (TAB) VDGR TJ = 25°C t

5.8. ixfn180n25t.pdf Size:143K _ixys

IXFN110N20
IXFN110N20

Advance Technical Information GigaMOSTM VDSS = 250V IXFN180N25T ID25 = 155A Power MOSFET ? ? RDS(on) ? 12.9m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M? 250 V VGSS Continuous 20 V S VGS

5.9. ixfn170n30p.pdf Size:118K _ixys

IXFN110N20
IXFN110N20

Preliminary Technical Information PolarTM Power MOSFET VDSS = 300V IXFN170N30P ID25 = 138A HiPerFETTM ? ? RDS(on) ? ? ? 18m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 200ns ? ? Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25C to 150C 300 V S G VDGR TJ = 25C to 150C, RGS = 1M? 300 V VGSS Continuous

5.10. ixfn180n20.pdf Size:71K _ixys

IXFN110N20
IXFN110N20

HiPerFETTM IXFN 180N20 VDSS = 200 V Power MOSFETs ID25 = 180 A Single Die MOSFET RDS(on) = 10 mW D trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 200 V S VDGR TJ = 25C to 150C; RGS = 1 MW 200 V G VGS Continuous 20 V VGSM Transient

5.11. ixfn100n50p.pdf Size:152K _ixys

IXFN110N20
IXFN110N20

IXFN 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 90 A Power MOSFET ? ? RDS(on) ? 49 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V VGSM Transie

5.12. ixfn160n30t.pdf Size:142K _ixys

IXFN110N20
IXFN110N20

Advance Technical Information GigaMOSTM VDSS = 300V IXFN160N30T ID25 = 130A Power MOSFET ? ? RDS(on) ? 19m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M? 300 V VGSS Continuous 20 V S VGSM

5.13. ixfn100n25.pdf Size:70K _ixys

IXFN110N20
IXFN110N20

Advanced Technical Information HiPerFETTM IXFN 100N25 VDSS = 250 V ID25 = 100 A Power MOSFETs Single MOSFET Die RDS(on) = 27 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25°C to 150°C 250 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW 250 V G VGS Continuous ±20 V

5.14. ixfk100n10 ixfn150n10.pdf Size:117K _ixys

IXFN110N20
IXFN110N20

VDSS ID25 RDS(on) HiPerFETTM IXFK100N10 100 V 100 A 12 mW Power MOSFETs IXFN150N10 100 V 150 A 12 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 100 100 V G (TAB) VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 100 V D S VGS Continuous ±20 ±20 V miniBLOC, SOT

5.15. ixfn180n10.pdf Size:84K _ixys

IXFN110N20
IXFN110N20

IXFN 180N10 VDSS = 100 V HiPerFETTM ID25 = 180 A Power MOSFET ? RDS(on) = 8 m? ? ? ? Single MOSFET Die ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 100 V S VDGR TJ = 25C to 150C, RGS = 1M? 100 V G VGS Continuous 20 V VGSM Transient 30 V S ID25 TC = 25C 180 A D IL(RMS)

5.16. ixfn120n20.pdf Size:157K _ixys

IXFN110N20
IXFN110N20

IXFN 120N20 VDSS = 200 V HiPerFETTM ID25 = 120 A Power MOSFETs ? RDS(on) = 17 m? ? ? ? Single MOSFET Die N-Channel Enhancement Mode ? trr ? ? 250 ns ? ? Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 200 V S VDGR TJ = 25C to 150C; RGS = 1 M? 200 V G VGS Continuous 20 V VGSM Transien

5.17. ixfk100n20 ixfn90n20 ixfn106n20.pdf Size:112K _ixys

IXFN110N20
IXFN110N20

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr ? 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25C to 150C 200 200 200 V G (TAB) VDGR TJ = 25C to 150C

5.18. ixfn130n30.pdf Size:155K _ixys

IXFN110N20
IXFN110N20

HiPerFETTM IXFN 130N30 VDSS = 300 V Power MOSFETs ID25 = 130 A Single Die MOSFET ? RDS(on) = 22 m? ? ? ? D trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 300 V S VDGR TJ = 25C to 150C; RGS = 1 M? 300 V G VGS Continuous 20 V VGSM Transient

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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