All MOSFET. IXFN180N10 Datasheet

 

IXFN180N10 Datasheet and Replacement


   Type Designator: IXFN180N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 360 nC
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOT227B
 

 IXFN180N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFN180N10 Datasheet (PDF)

 ..1. Size:84K  ixys
 ixfn180n10.pdf pdf_icon

IXFN180N10

IXFN 180N10 VDSS = 100 VHiPerFETTMID25 = 180 APower MOSFETRDS(on) = 8 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 100 VSVDGR TJ = 25C to 150C, RGS = 1M 100 VGVGS Continuous 20 VVGSM Transient 30 VSID

 5.1. Size:152K  ixys
 ixfn180n15p.pdf pdf_icon

IXFN180N10

VDSS = 150 VIXFN 180N15PPolarHTTM HiPerFETID25 = 150 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche Ratedtrr 200 nsFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 175 C 150 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 15

 6.1. Size:143K  ixys
 ixfn180n25t.pdf pdf_icon

IXFN180N10

Advance Technical InformationGigaMOSTM VDSS = 250VIXFN180N25TID25 = 155APower MOSFET RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

 6.2. Size:190K  ixys
 ixfn180n07 ixfn200n07 ixfn200n06.pdf pdf_icon

IXFN180N10

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - IXFN180N10 MOSFET datasheet

 IXFN180N10 cross reference
 IXFN180N10 equivalent finder
 IXFN180N10 lookup
 IXFN180N10 substitution
 IXFN180N10 replacement

 

 
Back to Top

 


 
.