STD6N80K5 Datasheet and Replacement

STB6N80K5, STD6N80K5,STI6N80K5, STP6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on)max ID PTOT3131STB6N80K5DPAKD2PAKSTD6N80K5TAB TAB800 V 1.6 4.5 A 85 WSTI6N80K5STP6N80K5323211 Industrys lowest RDS(on)TO-

STD6N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD6N10 100 V

STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5DatasheetN-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packagesFeaturesTABTABOrder codes VDS RDS(on) max. ID PTOT31DPAK STD6N95K53TO-220 STP6N95K521 950 V 1.25 9 A 90 WTABSTU6N95K5STW6N95K5 DPAK 950 V worldwide best RDS(on)32IPAK13 Worldwide best FOM

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

STD6NF10STU6NF10N-channel 100 V, 0.22 , 6 A, DPAK, IPAKlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTD6NF10 100 V

STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp

STP6NK50Z - STF6NK50ZSTD6NK50ZN-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAKZener-Protected SuperMESH MOSFETTYPE VDSS RDS(on) ID PwSTP6NK50Z 500 V

STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

STD6NF10STU6NF10N-channel 100 V, 0.22 , 6 A, DPAK, IPAKlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTD6NF10 100 V

STD6N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD6N10 100 V

STD6N62K3 - STF6N62K3STP6N62K3 - STU6N62K3N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FPSuperMESH3 Power MOSFETFeatures3RDS(on) 3Type VDSS ID Pw2 1max1DPAKSTD6N62K3 620 V

STD6N95K5, STP6N95K5, STW6N95K5, STU6N95K5N-channel 950 V, 1 typ., 9 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220, TO-247 and IPAK packagesDatasheet - production dataFeatures TABTAB3 Order codes VDS RDS(on) max. ID PTOT13DPAK STD6N95K521STP6N95K5TO-220950 V 1.25 9 A 90 W STW6N95K5TABSTU6N95K53 DPAK 950 V worldwide best RDS(on)

STD6NF10N-CHANNEL 100V - 0.22 - 6A IPAK/DPAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD6NF10 100 V

STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V

STD6N62K3, STF6N62K3STI6N62K3, STP6N62K3, STU6N62K3N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFETin IPAK, DPAK, TO-220,TO-220FP, IPAKFeaturesRDS(on) 3Order codes VDSS ID Pw2max.1321IPAKSTD6N62K3 90 WIPAKSTF6N62K3 30 W3STI6N62K3 620 V

STD6NC40N-CHANNEL 400V - 0.75 - 5A - DPAK / IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD6NC40 400V

STB6N52K3, STD6N52K3STF6N52K3, STP6N52K3N-channel 525 V, 1 , 5 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) 3Order codes VDSS ID Pwmax132STB6N52K3 5 A 70 WDPAK1STD6N52K3 5 A(1) 25 WTO-220FP525 V

STP6NK50Z - STF6NK50ZSTD6NK50ZN-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAKZener-Protected SuperMESH MOSFETTYPE VDSS RDS(on) ID PwSTP6NK50Z 500 V

STD6N62K3DatasheetN-channel 620 V, 0.95 typ., 5.5 A MDmesh K3 Power MOSFET in DPAK packageFeaturesOrder codes VDS RDS(on) max. ID PTOTTABSTD6N62K3 620 V 1.2 5.5 A 90 W 100% avalanche tested32 Extremely high dv/dt capability1 Very low intrinsic capacitance Improved diode reverse recovery characteristicsDPAK Zener-protectedD(2, TAB)Appli

Isc N-Channel MOSFET Transistor STD6N95K5FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME