All MOSFET. STD6NM60N Datasheet

 

STD6NM60N MOSFET. Datasheet pdf. Equivalent

Type Designator: STD6NM60N

Marking Code: D6NM60N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.92 Ohm

Package: DPAK

STD6NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD6NM60N Datasheet (PDF)

1.1. stb6nm60n std6nm60n-1 std6nm60n stf6nm60n stp6nm60n.pdf Size:692K _st

STD6NM60N
STD6NM60N

STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V < 0.92 Ω 4.6 A 2 2 1 1 STD6NM60N 650 V < 0.92 Ω 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 Ω 4.6 A 3 1 STF6NM60N 650 V < 0.92 Ω 4.6 A (1) D²PAK STP6NM60N 650 V < 0.92 Ω 4.6 A 3 3 1 2 1

1.2. stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf Size:685K _st

STD6NM60N
STD6NM60N

STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V < 0.92 Ω 4.6 A 2 2 1 1 STD6NM60N 650 V < 0.92 Ω 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 Ω 4.6 A 3 1 STF6NM60N 650 V < 0.92 Ω 4.6 A (1) D²PAK STP6NM60N 650 V < 0.92 Ω 4.6 A 3 3 1 2 1

 5.1. std6nf10.pdf Size:266K _st

STD6NM60N
STD6NM60N

STD6NF10 N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STD6NF10 100 V <0.250 Ω 6 A TYPICAL RDS(on) = 0.22 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW THRESHOLD DRIVE 2 1 THROUGH-HOLE IPAK (TO-251) POWER 1 PACKAGE IN TUBE (SUFFIX “-1") IPAK DPAK SURFACE-MOUNTING DPAK (TO-252) TO-251 TO-252 PO

5.2. std6n10.pdf Size:344K _st

STD6NM60N
STD6NM60N

STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD6N10 100 V < 0.45 Ω 6 A TYPICAL R = 0.35 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK

 5.3. std6nf10 stu6nf10.pdf Size:327K _st

STD6NM60N
STD6NM60N

STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 Ω 6 A STU6NF10 100 V < 0.250 Ω 6 A 3 3 2 1 1 ■ Exceptional dv/dt capability IPAK ■ 100% avalanche tested DPAK Application ■ Switching applications Description This Power MOSFET series realized with Figure 1.

5.4. std6nf10t4.pdf Size:325K _st

STD6NM60N
STD6NM60N

STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 Ω 6 A STU6NF10 100 V < 0.250 Ω 6 A 3 3 2 1 1 ■ Exceptional dv/dt capability IPAK ■ 100% avalanche tested DPAK Application ■ Switching applications Description This Power MOSFET series realized with Figure 1.

 5.5. std6n62k3 stf6n62k3 stp6n62k3 stu6n62k3.pdf Size:427K _st

STD6NM60N
STD6NM60N

STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 Ω, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3™ Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V < 1.28 Ω 5.5 A 90 W IPAK STF6N62K3 620 V < 1.28 Ω 5.5 A(1) 25 W STP6N62K3 620 V < 1.28 Ω 5.5 A 90 W STU6N62K3 620 V < 1.28 Ω 5.5 A 90 W 1. Limited by package 3 3 2 2

5.6. stb6n60m2 std6n60m2.pdf Size:1156K _st

STD6NM60N
STD6NM60N

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max TAB TAB STB6N60M2 650 V 1.2 Ω 4.5 A 3 STD6N60M2 1 3 1 DPAK 2 • Extremely low gate charge D PAK • Lower RDS(on) x area vs previous generation • Low gate input resistanc

5.7. stp6nk50z stf6nk50z std6nk50z.pdf Size:399K _st

STD6NM60N
STD6NM60N

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2Ω 5.6 A 90 W STF6NK50Z 500 V <1.2Ω 5.6 A 25 W STD6NK50Z 500 V <1.2Ω 5.6 A 90 W TYPICAL RDS(on) = 0.93 Ω 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP V

5.8. stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf Size:1285K _st

STD6NM60N
STD6NM60N

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS RDS(on)max ID PTOT 3 1 3 1 STB6N80K5 DPAK D2PAK STD6N80K5 TAB TAB 800 V 1.6 Ω 4.5 A 85 W STI6N80K5 STP6N80K5 3 2 3 2 1 1 • Industry’s lowest RDS(on) TO-

5.9. stb6n65m2 std6n65m2.pdf Size:881K _st

STD6NM60N
STD6NM60N

STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STB6N65M2 650 V 1.35 Ω 4 A TAB TAB STD6N65M2 3 1 3 • Extremely low gate charge 1 DPAK 2 D PAK • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected App

5.10. sti6n62k3 stp6n62k3 stu6n62k3 stf6n62k3 std6n62k3.pdf Size:1146K _st

STD6NM60N
STD6NM60N

STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3™ Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I²PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I²PAK STF6N62K3 30 W 3 STI6N62K3 620 V < 1.2 Ω 5.5 A 90 W 1 STP6N62K3 90 W DPAK STU6N62K3 90 W ■ 100% avalanche tested 3 3 2 1 2 1 ■

5.11. std6nk50zt4 stf6nk50z.pdf Size:399K _st

STD6NM60N
STD6NM60N

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2Ω 5.6 A 90 W STF6NK50Z 500 V <1.2Ω 5.6 A 25 W STD6NK50Z 500 V <1.2Ω 5.6 A 90 W TYPICAL RDS(on) = 0.93 Ω 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP V

5.12. std6nc40.pdf Size:272K _st

STD6NM60N
STD6NM60N

STD6NC40 N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STD6NC40 400V < 1 Ω 5A TYPICAL RDS(on) = 0.75Ω EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DPAK IPAK ADD SUFFIX “-1” FOR ORDERING IN IPAK DESCRIPTION The PowerMESH™II is the e

5.13. stb6n52k3 std6n52k3 stf6n52k3 stp6n52k3.pdf Size:1153K _st

STD6NM60N
STD6NM60N

STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 Ω, 5 A, D²PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V < 1.2 Ω STF6N52K3 5 A 70 W STP6N52K3 1. Limited by package 3 3 ■ 100% avalanche tested 2 1 1 D²PAK TO-220 ■ Extremely h

5.14. std6n95k5.pdf Size:262K _inchange_semiconductor

STD6NM60N
STD6NM60N

Isc N-Channel MOSFET Transistor STD6N95K5 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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