STD70N03L MOSFET. Datasheet pdf. Equivalent
Type Designator: STD70N03L
Marking Code: D70N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15.7 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
Package: DPAK
STD70N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD70N03L Datasheet (PDF)
std70n03l-1 std70n03l-1 std70n03l.pdf
STD70N03LSTD70N03L-1N-channel 30V - 0.0059 - 70A - DPAK / IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70N03L 30V
std70n02l-1 std70n02l.pdf
STD70N02LSTD70N02L-1N-channel 25V - 0.0068 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) IDSTD70N02L 25V
std70n02l std70n02l-1.pdf
STD70N02LSTD70N02L-1N-channel 25V - 0.0068 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) IDSTD70N02L 25V
std70nh02l std70nh02l-1.pdf
STD70NH02LSTD70NH02L-1N-channel 24V - 0.0062 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70NH02L-1 24V
stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf
STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V
std70ns04zl.pdf
STD70NS04ZLN-channel clamped 9.5 m, 70 A DPAKfully protected SAFeFET Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTD70NS04ZL Clamped
std70nh02lt4.pdf
STD70NH02LSTD70NH02L-1N-channel 24V - 0.0062 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70NH02L-1 24V
std70n6f3.pdf
STD70N6F3N-channel 60 V, 8.0 m, 70 A DPAKSTripFET III Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) ID PwSTD70N6F3 60 V
std70n2lh5 stu70n2lh5.pdf
STD70N2LH5STU70N2LH5N-channel 25 V, 0.006 , 48 A - DPAK - IPAKSTripFET V Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) max IDSTD70N2LH5 25 V 0.0071 48 A STU70N2LH5 25 V 0.0075 48 A332 RDS(on) * Qg industry benchmark11 Extremely low on-resistance RDS(on)DPAKIPAK Very low switching gate charge High avalanche ruggedness L
std70n6f3.pdf
STD70N6F3www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STD70N02L
