STD7NS20T4 Datasheet and Replacement
   Type Designator: STD7NS20T4
   Type of Transistor: MOSFET
   Type of Control Channel: N
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 45
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
 V   
|Id| ⓘ - Maximum Drain Current: 7
 A   
Tj ⓘ - Maximum Junction Temperature: 150
 °C   
tr ⓘ - Rise Time: 15
 nS   
Cossⓘ - 
Output Capacitance: 90
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4
 Ohm
		   Package: 
DPAK
				
				  
				 
   - 
MOSFET ⓘ Cross-Reference Search
 
		
STD7NS20T4 Datasheet (PDF)
 ..1.  Size:242K  st
 std7ns20-1 std7ns20t4.pdf 
 
						 
 
STD7NS20STD7NS20-1N-CHANNEL 200V - 0.35 - 7A DPAK / IPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD7NS20 200 V 
 6.1.  Size:319K  st
 std7ns20 std7ns20-1.pdf 
 
						 
 
STD7NS20STD7NS20-1N-CHANNEL 200V - 0.35 - 7A DPAK / IPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD7NS20 200 V 
 9.1.  Size:1059K  st
 std7n65m2.pdf 
 
						 
 
STD7N65M2N-channel 650 V, 0.98  typ., 5 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max IDTABSTD7N65M2 650 V 1.15  5 A3 Extremely low gate charge1 Excellent output capacitance (Coss) profile 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Inte
 9.2.  Size:596K  st
 std7nm60n stf7nm60n stu7nm60n.pdf 
 
						 
 
STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8  typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9  5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications
 9.3.  Size:924K  st
 std7n52dk3 stf7n52dk3 stp7n52dk3.pdf 
 
						 
 
STD7N52DK3STF7N52DK3, STP7N52DK3N-channel 525 V, 0.95 , 6 A, DPAK, TO-220FP, TO-220SuperFREDmesh3 Power MOSFETFeaturesRDS(on) Order codes VDSS max. ID Pw31STD7N52DK3 6 A 90 WDPAKSTF7N52DK3 525 V 
 9.4.  Size:1194K  st
 stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf 
 
						 
 
STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax 3311STB7N52K3 525 V 
 9.5.  Size:986K  st
 std7nm64n.pdf 
 
						 
 
STD7NM64NN-channel 640 V, 5 A, 0.88  typ., MDmesh II Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDSTD7NM64N 640 V 1.05  5 A TAB 100% avalanche tested3 Low input capacitance and gate charge1 Low gate input resistanceDPAKApplications Switching applicationsDescriptionFigure 1. Internal schematic
 9.6.  Size:1317K  st
 stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf 
 
						 
 
STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.72 , 6 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax. 3311STB7N52K3 90 WDPAKDPAKSTD7N52K3 90 W525 V 
 9.7.  Size:882K  st
 std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf 
 
						 
 
STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V 
 9.8.  Size:605K  st
 stp7nk40z stp7nk40zfp std7nk40z std7nk40z-1.pdf 
 
						 
 
STP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP7NK40Z 400 V 
 9.9.  Size:725K  st
 std7nk30z stf7nk30z stp7nk30z.pdf 
 
						 
 
STD7NK30Z, STF7NK30ZSTP7NK30ZN-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF7NK30Z 300 V 
 9.10.  Size:723K  st
 std7nk30z.pdf 
 
						 
 
STD7NK30Z, STF7NK30ZSTP7NK30ZN-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF7NK30Z 300 V 
 9.11.  Size:431K  st
 std7nk40z-1 std7nk40zt4 stp7nk40zfp.pdf 
 
						 
 
STP7NK40Z - STP7NK40ZFPSTD7NK40Z - STD7NK40Z-1N-CHANNEL 400V-0.85-5.4A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP7NK40Z 400 V 
 9.12.  Size:969K  st
 std7nm80 std7nm80-1 stf7nm80 stp7nm80.pdf 
 
						 
 
STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V 
 9.13.  Size:424K  st
 std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf 
 
						 
 
STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V 
 9.14.  Size:488K  st
 std7nb20.pdf 
 
						 
 
STD7NB20STD7NB20-1N-CHANNEL 200V - 0.3 - 7A DPAK/IPAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTD7NB20 200 V 
 9.15.  Size:583K  st
 std7n52k3 stp7n52k3.pdf 
 
						 
 
STD7N52K3, STP7N52K3DatasheetN-channel 525 V, 0.72  typ., 6 A, MDmesh K3 Power MOSFETs in DPAK and TO-220 packagesFeaturesVDS RDS(on) max. ID PTOTOrder codesTABTABSTD7N52K3525 V 0.85  6 A 90 W32STP7N52K3132 100% avalanche testedDPAK TO-2201 Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recover
 9.16.  Size:426K  st
 std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf 
 
						 
 
STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V 
 9.17.  Size:971K  st
 std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf 
 
						 
 
STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V 
 9.18.  Size:995K  st
 std7n80k5 stp7n80k5 stu7n80k5.pdf 
 
						 
 
STD7N80K5, STP7N80K5, STU7N80K5N-channel 800 V, 0.95  typ., 6 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on)max ID PTOT2 31STD7N80K5DPAKSTP7N80K5 800 V 1.2  6 A 110 WTABSTU7N80K5TAB Worldwide best FOM (figure of merit)3  Ultra low gate charge2312 
 9.19.  Size:634K  st
 std7nk40zt4 stp7nk40z stp7nk40zfp.pdf 
 
						 
 
STD7NK40ZT4, STP7NK40Z, STP7NK40ZFPDatasheetN-channel 400 V, 0.85  typ., 5.4 A, SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packagesFeaturesTAB32VDS RDS(on) max. ID PTOTOrder code1DPAKSTD7NK40ZT4 70 WTABSTP7NK40Z 400 V 1  5.4 A 70 WSTP7NK40ZFP 25 W33 22 11TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche testedD(2,
 9.20.  Size:1199K  st
 std7n60m2 stp7n60m2 stu7n60m2.pdf 
 
						 
 
STD7N60M2, STP7N60M2, STU7N60M2N-channel 600 V, 0.86  typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID3TJmax max1STD7N60M2DPAKSTP7N60M2 650 V 0.95  5 ATABSTU7N60M2TAB Extremely low gate charge332  Lower RDS(on) x area vs previous generation21
 9.21.  Size:244K  inchange semiconductor
 std7n80k5.pdf 
 
						 
 
isc N-Channel MOSFET Transistor STD7N80K5FEATURESStatic drain-source on-resistance:RDS(on)1.2100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage 30 V
Datasheet: STD7N80K5
, STD7NK30Z
, STD7NK40Z-1
, STD7NK40ZT4
, STD7NM50N
, STD7NM50N-1
, STD7NM64N
, STD7NS20-1
, NCEP15T14
, STD80N10F7
, STD80N4F6
, STD80N6F6
, STD8N80K5
, STD8NF25
, STD8NM60N-1
, STD90N02L
, STD90N02L-1
. 
Keywords - STD7NS20T4 MOSFET datasheet
 STD7NS20T4 cross reference
 STD7NS20T4 equivalent finder
 STD7NS20T4 lookup
 STD7NS20T4 substitution
 STD7NS20T4 replacement