STD8NF25 Datasheet and Replacement
Type Designator: STD8NF25
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 72
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 8
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 90
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42
Ohm
Package:
DPAK
-
MOSFET ⓘ Cross-Reference Search
STD8NF25 Datasheet (PDF)
..1. Size:826K st
std8nf25.pdf 
STD8NF25N-channel 250 V, 318 m, 8 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STD8NF25 250 V
9.1. Size:341K 1
std8n06-1 std8n06t4.pdf
STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V
9.5. Size:299K st
std8n10.pdf
This datasheet has been downloaded from http://www.digchip.com at this page
9.6. Size:1402K st
std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf
STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V
9.7. Size:341K st
std8n06.pdf
STD8N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD8N06 60 V
9.8. Size:726K st
std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf
STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V
9.9. Size:122K st
std8ns25.pdf
STD8NS25N-CHANNEL 250V - 0.38 - 8A DPAKMESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD8NS25 250 V
9.10. Size:1239K st
stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf
STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V
9.11. Size:1302K st
std8n80k5.pdf
STD8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTSTD8N80K5 800 V 0.95 6 A 110 WTAB Worldwide best FOM (figure of merit)3 Ultra low gate charge1 100% avalanche testedDPAK Zener protectedApplications Switching applicationsF
9.12. Size:377K st
std8n60dm2.pdf
STD8N60DM2DatasheetN-channel 600 V, 550 m typ., 8 A, MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTD8N60DM2 600 V 600 m 8 A 85 W321 Fast-recovery body diodeDPAK Extremely low gate charge and input capacitance Low on-resistanceD(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Ze
9.13. Size:698K st
stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf
STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V
9.14. Size:1298K st
stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf
STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V
9.15. Size:700K st
stp8nm60n stf8nm60n std8nm60n stb8nm60n.pdf
STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V
Datasheet: STD7NM50N-1
, STD7NM64N
, STD7NS20-1
, STD7NS20T4
, STD80N10F7
, STD80N4F6
, STD80N6F6
, STD8N80K5
, AO3401
, STD8NM60N-1
, STD90N02L
, STD90N02L-1
, STD90NH02LT4
, STD95N04
, STD95NH02LT4
, STD96N3LLH6
, STD9HN65M2
.
History: DMT6005LCT
| CAS100H12AM1
| BRF10N80
| QM4014D
| VBFB165R10
| JCS80N08I
| NVMFD5873NL
Keywords - STD8NF25 MOSFET datasheet
STD8NF25 cross reference
STD8NF25 equivalent finder
STD8NF25 lookup
STD8NF25 substitution
STD8NF25 replacement
