All MOSFET. IXFN26N90 Datasheet

 

IXFN26N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFN26N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 240 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT227B

 IXFN26N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN26N90 Datasheet (PDF)

 ..1. Size:141K  ixys
 ixfn26n90 ixfn25n90.pdf

IXFN26N90 IXFN26N90

VDSS ID (cont) RDS(on) trrHiPerFETTM Power MOSFETs900 V 26 A 0.30 W 250 ns IXFN 26N90Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 nsN-Channel Enhancement ModeDAvalanche Rated, High dv/dt, Low trrGPreliminary data sheetSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 900 VSVDGR TJ = 25C to 150C; RGS =

 8.1. Size:124K  ixys
 ixfn260n17t.pdf

IXFN26N90 IXFN26N90

Advance Technical InformationGigaMOSTM VDSS = 170VIXFN260N17TID25 = 245APower MOSFET RDS(on) 6.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227E153432Fast Intrinsic DiodeSGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 170 VVDGR TJ = 25C to 175C, RGS = 1M 170

 9.1. Size:283K  1
 ixfn230n10.pdf

IXFN26N90 IXFN26N90

Advanced Technical InformationHiPerFETTMIXFN 230N10 VDSS = 100 VPower MOSFETsID25 = 230 ASingle Die MOSFET RDS(on) = 6 mWDtrr

 9.2. Size:162K  ixys
 ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf

IXFN26N90 IXFN26N90

Not for New DesignsVDSS ID25 RDS(on)IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrIXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings

 9.3. Size:131K  ixys
 ixfn210n30p3.pdf

IXFN26N90 IXFN26N90

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFN210N30P3Power MOSFET ID25 = 192A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

 9.4. Size:203K  ixys
 ixfn200n06.pdf

IXFN26N90 IXFN26N90

!VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150

 9.5. Size:108K  ixys
 ixfn24n100.pdf

IXFN26N90 IXFN26N90

HiPerFETTM Power VDSS = 1000VIXFN24N100MOSFET ID25 = 24A RDS(on) 390m N-Channel Enhancement Modetrr 250nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 1000 VSGVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VV

 9.6. Size:94K  ixys
 ixfn200n06 ixfn200n07.pdf

IXFN26N90 IXFN26N90

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mPower MOSFETsIXFN 200 N07 70 V 200 A 6 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VVDGR TJ = 25C to 150C; RGS

 9.7. Size:190K  ixys
 ixfn180n07 ixfn200n07 ixfn200n06.pdf

IXFN26N90 IXFN26N90

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06

 9.8. Size:143K  ixys
 ixfn230n20t.pdf

IXFN26N90 IXFN26N90

Advance Technical InformationGigaMOSTM VDSS = 200VIXFN230N20TID25 = 230APower MOSFET RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M

 9.9. Size:86K  ixys
 ixfn200n10p.pdf

IXFN26N90 IXFN26N90

VDSS = 100 VIXFN 200N10PPolarTM HiPerFETID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432SVDSS TJ = 25C to 175C 100 VGVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGS C

 9.10. Size:151K  ixys
 ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf

IXFN26N90 IXFN26N90

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsN-Channel Enhancement ModeIXFK 27N80 800 V 27 A 0.30 WAvalanche Rated, High dv/dt, Low trrIXFK 25N80 800 V 25 A 0.35 WIXFN 27N80 800 V 27 A 0.30 WIXFN 25N80 800 V 25 A 0.35 WSymbol Test Conditions Maximum Ratings TO-264 AA (IXFK)IXFK IXFNVDSS TJ = 25C to 150C 800 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 800 VVGS Continuo

 9.11. Size:113K  ixys
 ixfn280n07.pdf

IXFN26N90 IXFN26N90

HiPerFETTM VDSS = 70VIXFN280N07ID25 = 280APower MOSFETs RDS(on) 5m Single Die MOSFETtrr 250nsN-Channel Enhancement ModeAvalanche RatedHigh dV/dt, Low trrminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 70 VVDGR TJ = 25C to 150C, RGS = 1M 70 VVGSS

Datasheet: IXFN170N10 , IXFN180N07 , IXFN180N10 , IXFN180N20 , IXFN200N07 , IXFN230N10 , IXFN24N100 , IXFN25N90 , SPW47N60C3 , IXFN27N80 , IXFN280N07 , IXFN32N60 , IXFN340N07 , IXFN34N80 , IXFN36N100 , IXFN36N60 , IXFN39N90 .

History: IXFH88N20Q | 2SJ539

 

 
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