IXFN27N80
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN27N80
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 520
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 350
nC
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 712
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
SOT227B
IXFN27N80
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN27N80
Datasheet (PDF)
..1. Size:162K ixys
ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf 
Not for New DesignsVDSS ID25 RDS(on)IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrIXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings
..2. Size:151K ixys
ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf
VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsN-Channel Enhancement ModeIXFK 27N80 800 V 27 A 0.30 WAvalanche Rated, High dv/dt, Low trrIXFK 25N80 800 V 25 A 0.35 WIXFN 27N80 800 V 27 A 0.30 WIXFN 25N80 800 V 25 A 0.35 WSymbol Test Conditions Maximum Ratings TO-264 AA (IXFK)IXFK IXFNVDSS TJ = 25C to 150C 800 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 800 VVGS Continuo
9.1. Size:283K 1
ixfn230n10.pdf
Advanced Technical InformationHiPerFETTMIXFN 230N10 VDSS = 100 VPower MOSFETsID25 = 230 ASingle Die MOSFET RDS(on) = 6 mWDtrr
9.2. Size:131K ixys
ixfn210n30p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFN210N30P3Power MOSFET ID25 = 192A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M
9.3. Size:141K ixys
ixfn26n90 ixfn25n90.pdf
VDSS ID (cont) RDS(on) trrHiPerFETTM Power MOSFETs900 V 26 A 0.30 W 250 ns IXFN 26N90Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 nsN-Channel Enhancement ModeDAvalanche Rated, High dv/dt, Low trrGPreliminary data sheetSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 900 VSVDGR TJ = 25C to 150C; RGS =
9.4. Size:203K ixys
ixfn200n06.pdf
!VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150
9.5. Size:108K ixys
ixfn24n100.pdf
HiPerFETTM Power VDSS = 1000VIXFN24N100MOSFET ID25 = 24A RDS(on) 390m N-Channel Enhancement Modetrr 250nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 1000 VSGVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VV
9.6. Size:94K ixys
ixfn200n06 ixfn200n07.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mPower MOSFETsIXFN 200 N07 70 V 200 A 6 mN-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VVDGR TJ = 25C to 150C; RGS
9.7. Size:190K ixys
ixfn180n07 ixfn200n07 ixfn200n06.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06
9.8. Size:143K ixys
ixfn230n20t.pdf
Advance Technical InformationGigaMOSTM VDSS = 200VIXFN230N20TID25 = 230APower MOSFET RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M
9.9. Size:86K ixys
ixfn200n10p.pdf
VDSS = 100 VIXFN 200N10PPolarTM HiPerFETID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432SVDSS TJ = 25C to 175C 100 VGVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGS C
9.10. Size:124K ixys
ixfn260n17t.pdf
Advance Technical InformationGigaMOSTM VDSS = 170VIXFN260N17TID25 = 245APower MOSFET RDS(on) 6.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227E153432Fast Intrinsic DiodeSGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 170 VVDGR TJ = 25C to 175C, RGS = 1M 170
9.11. Size:113K ixys
ixfn280n07.pdf
HiPerFETTM VDSS = 70VIXFN280N07ID25 = 280APower MOSFETs RDS(on) 5m Single Die MOSFETtrr 250nsN-Channel Enhancement ModeAvalanche RatedHigh dV/dt, Low trrminiBLOC, SOT-227 B (IXFN)E153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 70 VVDGR TJ = 25C to 150C, RGS = 1M 70 VVGSS
Datasheet: IXFN180N07
, IXFN180N10
, IXFN180N20
, IXFN200N07
, IXFN230N10
, IXFN24N100
, IXFN25N90
, IXFN26N90
, 2SK3918
, IXFN280N07
, IXFN32N60
, IXFN340N07
, IXFN34N80
, IXFN36N100
, IXFN36N60
, IXFN39N90
, IXFN44N50
.
