All MOSFET. IRFUC20PBF Datasheet

 

IRFUC20PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFUC20PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-251

 IRFUC20PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFUC20PBF Datasheet (PDF)

 ..1. Size:1109K  international rectifier
irfrc20pbf irfuc20pbf.pdf

IRFUC20PBF
IRFUC20PBF

PD - 95098AIRFRC20PbFIRFUC20PbF Lead-Free1/10/05Document Number: 91285 www.vishay.com1IRFR/UC20PbFDocument Number: 91285 www.vishay.com2IRFR/UC20PbFDocument Number: 91285 www.vishay.com3IRFR/UC20PbFDocument Number: 91285 www.vishay.com4IRFR/UC20PbFDocument Number: 91285 www.vishay.com5IRFR/UC20PbFDocument Number: 91285 www.vishay.com6IRFR/UC2

 ..2. Size:1122K  vishay
irfrc20pbf irfuc20pbf sihfrc20 sihfuc20.pdf

IRFUC20PBF
IRFUC20PBF

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4 Surface Mount (IRFRC20, SiHFRC20)Qg (Max.) (nC) 18 Straight Lead (IRFUC20, SiHFUC20)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 8.9 Fast SwitchingConfigu

 7.1. Size:1918K  vishay
irfrc20 irfuc20 sihfrc20 sihfuc20.pdf

IRFUC20PBF
IRFUC20PBF

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 4.4 Repetitive Avalanche RatedQg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20)Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20)Qgd (nC) 8.9 Available in T

 7.2. Size:297K  inchange semiconductor
irfuc20.pdf

IRFUC20PBF
IRFUC20PBF

iscN-Channel MOSFET Transistor IRFUC20FEATURESLow drain-source on-resistance:RDS(ON) =4.4 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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