IXFN32N60 Specs and Replacement
Type Designator: IXFN32N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 840 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT227B
IXFN32N60 substitution
- MOSFET ⓘ Cross-Reference Search
IXFN32N60 datasheet
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf
IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒
ixfn39n90.pdf
VDSS = 900 V IXFN 39N90 HiPerFETTM ID25 = 39 A Power MOSFETs RDS(on) = 0.22 Single MOSFET Die D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25 C to 150 C 900 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 900 ... See More ⇒
ixfn36n100.pdf
HiPerFETTM IXFN 36N100 V = 1000V DSS Power MOSFETs ID25 = 36A Single Die MOSFET RDS(on) = 0.24 D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 1000 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V VGSM ... See More ⇒
ixfn34n80.pdf
HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 800 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V VGSM Transi... See More ⇒
Detailed specifications: IXFN180N20 , IXFN200N07 , IXFN230N10 , IXFN24N100 , IXFN25N90 , IXFN26N90 , IXFN27N80 , IXFN280N07 , MMIS60R580P , IXFN340N07 , IXFN34N80 , IXFN36N100 , IXFN36N60 , IXFN39N90 , IXFN44N50 , IXFN44N50U2 , IXFN44N50U3 .
Keywords - IXFN32N60 MOSFET specs
IXFN32N60 cross reference
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IXFN32N60 substitution
IXFN32N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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