IRFY9140X MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFY9140X
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id|ⓘ - Maximum Drain Current: 15.8 A
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 85 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-257AB
IRFY9140X Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFY9140X Datasheet (PDF)
irfy9140x.pdf
IRFY9140XDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9140m.pdf
PD - 94197CIRFY9140, IRFY9140MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140 0.20 -15.8A GlassIRFY9140M 0.20 -15.8A GlassHEXFET MOSFET technology is the key to InternationalTO-257AARectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very
irfy9140cm.pdf
PD - 91294DIRFY9140C, IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achiev
irfy9140.pdf
PD - 94197AIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET T
irfy9140c.pdf
PD - 91294BIRFY9140C,IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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