IRFZ34NLPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ34NLPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 29
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 49
nS
Cossⓘ -
Output Capacitance: 240
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO-262
IRFZ34NLPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ34NLPBF
Datasheet (PDF)
..1. Size:296K international rectifier
irfz34nlpbf irfz34nspbf.pdf 
PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
..2. Size:296K infineon
irfz34nspbf irfz34nlpbf.pdf
PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech
7.1. Size:263K international rectifier
auirfz34n.pdf
PD - 97621AUTOMOTIVE GRADEAUIRFZ34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.040Gl Fast Switchingl Fully Avalanche RatedS ID29Al Repetitive Avalanche Allowed upto Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescription
7.2. Size:104K international rectifier
irfz34n.pdf
PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance
7.3. Size:179K international rectifier
irfz34npbf.pdf
PD - 94807IRFZ34NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible o
7.4. Size:161K international rectifier
irfz34ns.pdf
PD - 9.1311AIRFZ34NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040 Fast SwitchingG Fully Avalanche RatedID = 29ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo
7.5. Size:109K infineon
irfz34n.pdf
PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance
7.6. Size:2679K cn vbsemi
irfz34np.pdf
IRFZ34NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
7.7. Size:1177K cn vbsemi
irfz34nstr.pdf
IRFZ34NSTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di
7.8. Size:258K inchange semiconductor
irfz34ns.pdf
isc N-Channel MOSFET Transistor IRFZ34NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
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