All MOSFET. IRFZ44EPBF Equivalents Search

 

IRFZ44EPBF Spec and Replacement


   Type Designator: IRFZ44EPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-220AB

 IRFZ44EPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ44EPBF Specs

 ..1. Size:150K  international rectifier
irfz44epbf.pdf pdf_icon

IRFZ44EPBF

PD - 94822 IRFZ44EPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.023 Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.... See More ⇒

 7.1. Size:96K  international rectifier
irfz44e.pdf pdf_icon

IRFZ44EPBF

PD - 91671B IRFZ44E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.023 G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi... See More ⇒

 7.2. Size:234K  international rectifier
irfz44espbf irfz44elpbf.pdf pdf_icon

IRFZ44EPBF

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒

 7.3. Size:163K  international rectifier
irfz44es irfz44el.pdf pdf_icon

IRFZ44EPBF

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175 C Operating Temperature RDS(on) = 0.023 G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒

Detailed specifications: IRFZ34EPBF , IRFZ34L , IRFZ34NLPBF , IRFZ34NPBF , IRFZ34NSPBF , IRFZ34PBF , IRFZ34S , IRFZ40PBF , IRF830 , IRFZ44ESPBF , IRFZ44L , IRFZ44NLPBF , IRFZ44NPBF , IRFZ44NSPBF , IRFZ44PBF , IRFZ44R , IRFZ44RPBF .

Keywords - IRFZ44EPBF MOSFET specs

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