IRFZ48 Datasheet and Replacement

   Type Designator: IRFZ48
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220AB

IRFZ48 substitution

- MOSFET ⓘ Cross-Reference Search

IRFZ48 Datasheet (PDF)

..1. Size:2033K international rectifier
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PD - 94956IRFZ48PbF Lead-Free1/29/04Document Number: 91294 www.vishay.com1IRFZ48PbFDocument Number: 91294 www.vishay.com2IRFZ48PbFDocument Number: 91294 www.vishay.com3IRFZ48PbFDocument Number: 91294 www.vishay.com4IRFZ48PbFDocument Number: 91294 www.vishay.com5IRFZ48PbFDocument Number: 91294 www.vishay.com6IRFZ48PbFTO-220AB Package Outline

..2. Size:175K international rectifier
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..3. Size:1517K vishay
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IRFZ48, SiHFZ48Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.018 RoHS* Ultra Low On-ResistanceCOMPLIANTQg (Max.) (nC) 110 Very Low Thermal ResistanceQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Fast SwitchingConfiguration Single E

..4. Size:249K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFZ48FEATURESStatic drain-source on-resistance:RDS(on) 35mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

0.1. Size:301K international rectifier
irfz48nspbf irfz48nlpbf.pdf pdf_icon

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

0.2. Size:220K international rectifier
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PD - 97732AUTOMOTIVE GRADEAUIRFZ48NHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.11ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 14ml Fast SwitchingSID69Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDesc

0.3. Size:319K international rectifier
irfz48s irfz48l.pdf pdf_icon

PD - 9.894AIRFZ48S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

0.4. Size:223K international rectifier
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PD - 94992AIRFZ48VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 72Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

0.5. Size:192K international rectifier
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0.6. Size:53K international rectifier
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Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

0.7. Size:252K international rectifier
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PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

0.8. Size:131K international rectifier
irfz48ns irfz48nl.pdf pdf_icon

PD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL)D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingStechniques to achie

0.9. Size:102K international rectifier
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PD - 91406IRFZ48NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 14m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

0.10. Size:252K international rectifier
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0.11. Size:226K international rectifier
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PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

0.12. Size:282K international rectifier
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PD - 94051AIRFZ48VSHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to a

0.13. Size:301K international rectifier
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0.14. Size:179K international rectifier
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PD - 95573IRFZ48VSPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 12mGl Fully Avalanche Ratedl Optimized for SMPS ApplicationsID = 72ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced proc

0.15. Size:111K international rectifier
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PD - 93959AIRFZ48VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

0.16. Size:262K international rectifier
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PD - 95761IRFZ48RSPbFIRFZ48RLPbFl Advanced Process Technology HEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.018l Drop in Replacement of the IRFZ48Gfor Linear/Audio ApplicationsID = 50*Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier

0.17. Size:136K international rectifier
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PD - 93958IRFZ48RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.018G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ48 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

0.18. Size:376K international rectifier
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PD - 95574AIRFZ48ZPbFIRFZ48ZSPbFIRFZ48ZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 61ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques

0.19. Size:53K philips
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0.20. Size:377K vishay
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IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S)Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)Qgs (nC) 29 175 C Operating TemperatureQgd (nC)

0.21. Size:1059K vishay
irfz48r sihfz48r.pdf pdf_icon

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

0.22. Size:228K vishay
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf pdf_icon

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

0.23. Size:1061K vishay
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0.24. Size:203K vishay
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0.25. Size:437K cn evvo
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IRFZ48NN-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 60V 12m 60A technology Description TO220 Pin Configuration The IRFZ48N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSO

0.26. Size:861K cn vbsemi
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IRFZ48VPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

0.27. Size:1790K cn vbsemi
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IRFZ48NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

0.28. Size:901K cn vbsemi
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IRFZ48RSPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc

0.29. Size:251K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFZ48NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

0.30. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48Z IIRFZ48ZFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.31. Size:144K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.014(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

0.32. Size:213K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFZ48VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

0.33. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48V IIRFZ48VFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

0.34. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IRFZ48ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .