STF14NM65N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STF14NM65N
Marking Code: 14NM65N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO-220FP
STF14NM65N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF14NM65N
Datasheet (PDF)
7.1. Size:1281K st
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
7.2. Size:1066K st
stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
7.3. Size:1269K st
stf14nm50n sti14nm50n stp14nm50n.pdf
STF14NM50N, STI14NM50N,STP14NM50NN-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETsin TO-220FP, IPAK and TO-220 packagesDatasheet - production dataFeatures VDS @ RDS(on) Order codes IDTJmax max3STF14NM50N21STI14NM50N 550 V 0.32 12 A TO-220FPSTP14NM50NTABTAB 100% avalanche tested Low input capacitance and gate charge33TO-220 2I
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