STFI20N65M5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STFI20N65M5
Marking Code: 20N65M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 36
nC
trⓘ - Rise Time: 7.5
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package: I2PAKFP
STFI20N65M5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STFI20N65M5
Datasheet (PDF)
..1. Size:808K st
stf20n65m5 stfi20n65m5.pdf 
STF20N65M5, STFI20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF20N65M5710 V 0.19 18 ASTFI20N65M53 Worldwide best RDS(on) * area 12 231 Higher VDSS rating and high dv/dt capabilityTO-220FPI2PAKFP Excellent switching
7.1. Size:525K st
stfi20nk50z.pdf
STFI20NK50ZN-channel 500 V, 0.23 , 17 A Zener-protected SuperMESH Power MOSFET in IPAKFP packageDatasheet production dataFeatures RDS(on) Type VDSS ID PTOTmaxSTFI20NK50Z 500 V
7.2. Size:773K st
stfi20nm65n.pdf
STFI20NM65NN-channel 650 V, 15 A, 0.250 typ., MDmesh II Power MOSFET in a IPAKFP packageDatasheet - production dataFeatures Order code VDSS @Tjmax RDS(on) max. IDSTFI20NM65N 710 V 0.270 15 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance1232 ApplicationsI PAKFP (TO-281) Switching applicationsDescriptio
9.1. Size:1364K st
stf24n60m2 stfi24n60m2 stfw24n60m2.pdf
STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area
9.2. Size:442K st
stfi260n6f6.pdf
STFI260N6F6N-channel 60 V, 0.0024 , 80 A STripFET VI DeepGATE Power MOSFET in IPAKFP packageDatasheet preliminary dataFeaturesOrder codes VDSS RDS(on) max IDSTFI260N6F6 60 V
9.3. Size:673K st
stfi26nm60n.pdf
STFI26NM60NN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesRDS(on) Type VDSS max IDSTFI26NM60N 600 V
9.4. Size:731K st
stfi24nm60n.pdf
STFI24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Order code ID(@Tjmax) max.STFI24NM60N 650 V
9.5. Size:883K st
stf28n60m2 stfi28n60m2.pdf
STF28N60M2, STFI28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF28N60M2650 V 0.150 22 ASTFI28N60M23 Extremely low gate charge21 Excellent output capacitance (Coss) profile TO-220FP 123 100% avalanche tested2I PAKFP
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