STFI24N60M2 Datasheet and Replacement
Type Designator: STFI24N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: I2PAKFP
STFI24N60M2 substitution
STFI24N60M2 Datasheet (PDF)
stf24n60m2 stfi24n60m2 stfw24n60m2.pdf

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area
stfi24nm60n.pdf

STFI24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Order code ID(@Tjmax) max.STFI24NM60N 650 V
stfi20nk50z.pdf

STFI20NK50ZN-channel 500 V, 0.23 , 17 A Zener-protected SuperMESH Power MOSFET in IPAKFP packageDatasheet production dataFeatures RDS(on) Type VDSS ID PTOTmaxSTFI20NK50Z 500 V
stf20n65m5 stfi20n65m5.pdf

STF20N65M5, STFI20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF20N65M5710 V 0.19 18 ASTFI20N65M53 Worldwide best RDS(on) * area 12 231 Higher VDSS rating and high dv/dt capabilityTO-220FPI2PAKFP Excellent switching
Datasheet: STFI130N10F3 , STFI13N60M2 , STFI13N65M2 , STFI13N80K5 , STFI15N65M5 , STFI15NM65N , STFI20N65M5 , STFI20NM65N , 2SK3568 , STFI24NM60N , STFI260N6F6 , STFI26NM60N , STFI28N60M2 , STFI31N65M5 , STFI34N65M5 , STFI34NM60N , STFI40N60M2 .
Keywords - STFI24N60M2 MOSFET datasheet
STFI24N60M2 cross reference
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