STFI34NM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STFI34NM60N
Marking Code: 34NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 29 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 84 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 173 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: I2PAKFP
STFI34NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STFI34NM60N Datasheet (PDF)
stfi34nm60n.pdf
STFI34NM60NN-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesRDS(on) Order code VDS ID PTOTmax.STFI34NM60N 600 V 0.105 29 A 40 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate12 100% avalanche tested3 Low input capacitance and gate charge
stb34n65m5 stf34n65m5 stfi34n65m5 stp34n65m5 stw34n65m5.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: OM3N100SA
History: OM3N100SA
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