All MOSFET. STH240N10F7-2 Datasheet

 

STH240N10F7-2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STH240N10F7-2
   Marking Code: 240N10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 139 nS
   Cossⓘ - Output Capacitance: 2950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: H2PAK-2

 STH240N10F7-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STH240N10F7-2 Datasheet (PDF)

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 sth240n10f7-2 sth240n10f7-6.pdf

STH240N10F7-2 STH240N10F7-2

STH240N10F7-2, STH240N10F7-6N-channel 100 V, 0.002 typ., 180 A STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. IDSTH240N10F7-2TABTAB 100 V 0.0025 180 ASTH240N10F7-6 Ultra low on-resistance273 100% avalanche tested11H2PAK-2H2PAK-6Applications High current switchin

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 sth240n75f3-2 sth240n75f3-6.pdf

STH240N10F7-2 STH240N10F7-2

STH240N75F3-2, STH240N75F3-6N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeaturesRDS(on) Order code VDSS max. ID TABSTH240N75F3-275 V

 9.1. Size:863K  st
 sth245n75f3-6.pdf

STH240N10F7-2 STH240N10F7-2

STH245N75F3-6Automotive-grade N-channel 75 V, 2.6 m typ., 180 A STripFET F3 Power MOSFET in a HPAK-6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTH245N75F3-6 75 V 3.0 m 180 A Designed for automotive applications and AEC-Q101 qualified7 Conduction losses reduced1 Low profile, very low parasitic inductanceH2PAK-6A

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History: WSD2068

 

 
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