STH245N75F3-6
MOSFET. Datasheet pdf. Equivalent
Type Designator: STH245N75F3-6
Marking Code: 245N75F3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 180
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 87
nC
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 1100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package: H2PAK-6
STH245N75F3-6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH245N75F3-6
Datasheet (PDF)
..1. Size:863K st
sth245n75f3-6.pdf
STH245N75F3-6Automotive-grade N-channel 75 V, 2.6 m typ., 180 A STripFET F3 Power MOSFET in a HPAK-6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTH245N75F3-6 75 V 3.0 m 180 A Designed for automotive applications and AEC-Q101 qualified7 Conduction losses reduced1 Low profile, very low parasitic inductanceH2PAK-6A
9.1. Size:768K st
sth240n10f7-2 sth240n10f7-6.pdf
STH240N10F7-2, STH240N10F7-6N-channel 100 V, 0.002 typ., 180 A STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. IDSTH240N10F7-2TABTAB 100 V 0.0025 180 ASTH240N10F7-6 Ultra low on-resistance273 100% avalanche tested11H2PAK-2H2PAK-6Applications High current switchin
9.2. Size:872K st
sth240n75f3-2 sth240n75f3-6.pdf
STH240N75F3-2, STH240N75F3-6N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeaturesRDS(on) Order code VDSS max. ID TABSTH240N75F3-275 V
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