All MOSFET. 2SJ529 Equivalents Search

 

2SJ529 Specs and Replacement


   Type Designator: 2SJ529
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: DPAK
 

 2SJ529 substitution

   - MOSFET ⓘ Cross-Reference Search

 

2SJ529 Specs

 ..1. Size:94K  renesas
2sj529.pdf pdf_icon

2SJ529

2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Pa... See More ⇒

 0.1. Size:108K  renesas
rej03g0879 2sj529lsds.pdf pdf_icon

2SJ529

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:1426K  cn vbsemi
2sj529stl.pdf pdf_icon

2SJ529

2SJ529STL www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym... See More ⇒

 0.3. Size:831K  cn vbsemi
2sj529s.pdf pdf_icon

2SJ529

2SJ529S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo... See More ⇒

Detailed specifications: 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 2SJ526 , 2SJ527 , 2SJ528 , 7N60 , 2SJ530 , 2SJ531 , 2SJ532 , 2SJ533 , 2SJ534 , 2SJ535 , 2SJ539 , 2SJ540 .

History: 2SJ266 | BUK768R1-100E

Keywords - 2SJ529 MOSFET specs

 2SJ529 cross reference
 2SJ529 equivalent finder
 2SJ529 lookup
 2SJ529 substitution
 2SJ529 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


History: 2SJ266 | BUK768R1-100E

social 

LIST

Last Update

MOSFET: AP3N50K | AP3N50F | AP3912GD

 

 

 
Back to Top

 

Popular searches

2n2712 datasheet | 2sc2525 | tip73 | 2n3392 | 2n2369a | 2sc733 | a933 transistor | d209l

 


 
.