STH7NA90FI Datasheet. Specs and Replacement

Type Designator: STH7NA90FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: ISOWATT218

STH7NA90FI substitution

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STH7NA90FI datasheet

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STH7NA90FI

STW7NA90 STH7NA90FI N - CHANNEL 900V - 1.05 - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE VDSS RDS(on) ID STW7NA90 900 V ... See More ⇒

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STH7NA90FI

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STH7NA90FI

STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V ... See More ⇒

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STH7NA90FI

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Detailed specifications: STH315N10F7-2, STH315N10F7-6, STH320N4F6-2, STH320N4F6-6, STH360N4F6-2, STH3N150-2, STH400N4F6-2, STH400N4F6-6, IRFZ44N, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110, IRHG597110, IRHG6110, IRHG7110, IRHG9110

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.