IRHG57110 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHG57110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: MO-036AB
IRHG57110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHG57110 Datasheet (PDF)
irhg57110.pdf
PD - 94432B RADIATION HARDENED IRHG57110 POWER MOSFET100V, Quad N-CHANNELTECHNOLOGY THRU-HOLE (MO-036) 55 Product Summary Part Number Radiation Level RDS(on) IDIRHG57110 100K Rads (Si) 0.29 1.6AIRHG53110 300K Rads (Si) 0.29 1.6AIRHG54110 500K Rads (Si) 0.29 1.6AIRHG58110 1000K Rads (Si) 0.31 1.6A MO-036ABInternational Rectifiers R5TM technology pro
irhg567110.pdf
PD - 94246BIRHG567110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY44 THRU-HOLE (MO-036AB) #Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHG567110 100K Rads (Si) 0.29 1.6A N IRHG563110 300K Rads (Si) 0.29 1.6A N IRHG567110 100K Rads (Si) 0.96 -0.96A P IRHG563110 300K Rads (Si) 0.96 -
irhg597110.pdf
PD - 94431IRHG597110100V, Quad P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY THRU-HOLE (MO-036AB) 4#4 Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96 -0.96A IRHG593110 300K Rads (Si) 0.98 -0.96A MO-036ABInternational Rectifiers RAD-HardTM HEXFET MOSFETFeatures:Technology provides high
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: F5042 | IRFI9620G
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