IXFR26N50Q PDF and Equivalents Search

 

IXFR26N50Q Specs and Replacement

Type Designator: IXFR26N50Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO247

IXFR26N50Q substitution

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IXFR26N50Q datasheet

 ..1. Size:78K  ixys
 ixfr24n50q ixfr26n50q.pdf pdf_icon

IXFR26N50Q

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TM IXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C... See More ⇒

 5.1. Size:33K  ixys
 ixfr24n50 ixfr26n50.pdf pdf_icon

IXFR26N50Q

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 50... See More ⇒

 9.1. Size:94K  ixys
 ixfr24n80p.pdf pdf_icon

IXFR26N50Q

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

 9.2. Size:112K  ixys
 ixfr24n100.pdf pdf_icon

IXFR26N50Q

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET RDS(on) 390m ISOPLUS247TM t 250ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Co... See More ⇒

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Detailed specifications: IXFR15N80Q , IXFR180N07 , IXFR180N085 , IXFR180N10 , IXFR24N100 , IXFR24N50 , IXFR24N50Q , IXFR26N50 , P55NF06 , IXFR30N50Q , IXFR32N50Q , IXFR50N50 , IXFR55N50 , IXFR58N20Q , IXFR80N20Q , IXFT10N100 , IXFT12N100 .

Keywords - IXFR26N50Q MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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