IRF1405LPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1405LPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 131
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 170
nC
trⓘ - Rise Time: 190
nS
Cossⓘ -
Output Capacitance: 1210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053
Ohm
Package:
TO-262
IRF1405LPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1405LPBF
Datasheet (PDF)
..1. Size:308K international rectifier
irf1405lpbf irf1405spbf.pdf
PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE
..2. Size:308K infineon
irf1405spbf irf1405lpbf.pdf
PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE
7.1. Size:179K international rectifier
irf1405z.pdf
PD - 94645AUTOMOTIVE MOSFETIRF1405ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 4.9ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processin
7.2. Size:313K international rectifier
auirf1405zstrl.pdf
PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for
7.3. Size:212K international rectifier
auirf1405.pdf
PD - 97691AAUTOMOTIVE GRADEAUIRF1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dv/dt RatingRDS(on) typ.4.6ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)169Al Repetitive Avalanche AllowedSup to TjmaxID (Package Limited)75Al Lead-Free,
7.4. Size:154K international rectifier
irf1405s.pdf
PD -93992IRF1405SAUTOMOTIVE MOSFETIRF1405LTypical ApplicationsHEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS)D Wiper Control VDSS = 55V Climate Control Power DoorRDS(on) = 5.3mBenefitsG Advanced Process TechnologyID = 131AV Ultra Low On-ResistanceS Dynamic dv/dt Rating 175C Operating Temperature Fast Switching R
7.5. Size:396K international rectifier
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
7.6. Size:319K international rectifier
irf1405zl-7ppbf irf1405zs-7ppbf.pdf
PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro
7.7. Size:247K international rectifier
auirf1405zs-7p.pdf
AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela
7.8. Size:258K international rectifier
irf1405pbf.pdf
PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF
7.9. Size:116K international rectifier
irf1405.pdf
PD -93991AAUTOMOTIVE MOSFETIRF1405Typical Applications Electric Power Steering (EPS)HEXFET Power MOSFET Anti-lock Braking System (ABS)D Wiper ControlVDSS = 55V Climate Control Power DoorBenefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-ResistanceID = 169AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive A
7.10. Size:247K infineon
auirf1405zs-7p.pdf
AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela
7.11. Size:258K infineon
irf1405pbf.pdf
PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF
7.12. Size:345K infineon
auirf1405zs auirf1405zl.pdf
AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed
7.13. Size:396K infineon
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
7.14. Size:246K inchange semiconductor
irf1405z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405ZIIRF1405ZFEATURESStatic drain-source on-resistance:RDS(on) 4.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
7.15. Size:252K inchange semiconductor
irf1405s.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM
7.16. Size:258K inchange semiconductor
irf1405zs.pdf
Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
7.17. Size:246K inchange semiconductor
irf1405.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405IIRF1405FEATURESStatic drain-source on-resistance:RDS(on) 5.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.