STI33N60M2 Datasheet. Specs and Replacement

Type Designator: STI33N60M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: I2PAK

STI33N60M2 substitution

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STI33N60M2 datasheet

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 stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf pdf_icon

STI33N60M2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 2 3 TJmax max 1 2 1 2 I PAK TO-220FP STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 STP33N60M2 26 A STW33N60M2 3 3 2 2 1 ... See More ⇒

 7.1. Size:794K  st
 stb33n65m2 stf33n65m2 sti33n65m2 stp33n65m2.pdf pdf_icon

STI33N60M2

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and I PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 24 A STP33N65M2 TAB TAB STI33N65M2 Extremely low gate charge Exce... See More ⇒

Detailed specifications: STI18N65M2, STI18N65M5, STI19NM65N, STI20N65M5, STI21NM60ND, STI23NM60N, STI24N60M2, STI260N6F6, IRFP250N, STI33N65M2, STI360N4F6, STI400N4F6, STI40N65M2, STI45N10F7, STI57N65M5, STI5N52U, STI60N55F3

Keywords - STI33N60M2 MOSFET specs

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