All MOSFET. STI33N60M2 Datasheet

 

STI33N60M2 Datasheet and Replacement


   Type Designator: STI33N60M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: I2PAK
 

 STI33N60M2 substitution

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STI33N60M2 Datasheet (PDF)

 ..1. Size:1110K  st
 stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf pdf_icon

STI33N60M2

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221

 7.1. Size:794K  st
 stb33n65m2 stf33n65m2 sti33n65m2 stp33n65m2.pdf pdf_icon

STI33N60M2

STB33N65M2, STF33N65M2,STP33N65M2, STI33N65M2N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) Order codes VDS max IDSTB33N65M233121STF33N65M2TO-220FPD2PAK650 V 0.14 24 ASTP33N65M2TAB TABSTI33N65M2 Extremely low gate charge Exce

Datasheet: STI18N65M2 , STI18N65M5 , STI19NM65N , STI20N65M5 , STI21NM60ND , STI23NM60N , STI24N60M2 , STI260N6F6 , AON7408 , STI33N65M2 , STI360N4F6 , STI400N4F6 , STI40N65M2 , STI45N10F7 , STI57N65M5 , STI5N52U , STI60N55F3 .

History: STH270N8F7-6 | STB70N10F4

Keywords - STI33N60M2 MOSFET datasheet

 STI33N60M2 cross reference
 STI33N60M2 equivalent finder
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