STI57N65M5 Datasheet. Specs and Replacement

Type Designator: STI57N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm

Package: I2PAK

STI57N65M5 substitution

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STI57N65M5 datasheet

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STI57N65M5

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET in I PAK, TO-220, TO-220FP and D PAK packages Datasheet production data Features TAB VDSS @ RDS(on) Order codes ID TJmax max 3 1 3 STB57N65M5 2 1 D PAK STF57N65M5 710 V ... See More ⇒

Detailed specifications: STI24N60M2, STI260N6F6, STI33N60M2, STI33N65M2, STI360N4F6, STI400N4F6, STI40N65M2, STI45N10F7, 2N7002, STI5N52U, STI60N55F3, STI6N80K5, STI76NF75, STI90N4F3, STK20N75F3, STK22N6F3, STK28N3LLH5

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.