STK38N3LLH5 Datasheet and Replacement
Type Designator: STK38N3LLH5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.6 nS
Cossⓘ - Output Capacitance: 980 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00155 Ohm
Package: POLARPAK
STK38N3LLH5 substitution
STK38N3LLH5 Datasheet (PDF)
stk38n3llh5.pdf

STK38N3LLH5N-channel 30 V, 1.3 m, 38 A, PolarPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max RDS(on)*QgSTK38N3LLH5 30 V 1.55 m 70.9 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmarkPolarPAK High avalanche ruggedness Fully encapsulated die 100% Mat
Datasheet: STI5N52U , STI60N55F3 , STI6N80K5 , STI76NF75 , STI90N4F3 , STK20N75F3 , STK22N6F3 , STK28N3LLH5 , SPP20N60C3 , STK800 , STK820 , STK822 , STK850 , STL100N10F7 , STL100NH3LL , STL105NS3LLH7 , STL10N60M2 .
History: WM03P91A | AOTF286L | WM04N50M | IRFY210C | 2N4416AC1C | SH8M11 | WM04P56M2
Keywords - STK38N3LLH5 MOSFET datasheet
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History: WM03P91A | AOTF286L | WM04N50M | IRFY210C | 2N4416AC1C | SH8M11 | WM04P56M2



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