STK38N3LLH5 Datasheet and Replacement
Type Designator: STK38N3LLH5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19.6 nS
Cossⓘ - Output Capacitance: 980 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00155 Ohm
Package: POLARPAK
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STK38N3LLH5 Datasheet (PDF)
stk38n3llh5.pdf

STK38N3LLH5N-channel 30 V, 1.3 m, 38 A, PolarPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max RDS(on)*QgSTK38N3LLH5 30 V 1.55 m 70.9 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmarkPolarPAK High avalanche ruggedness Fully encapsulated die 100% Mat
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History: FQD4N25TM | 2SK3192



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