STL11N65M5 Datasheet. Specs and Replacement

Type Designator: STL11N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: POWERFLAT5X5

STL11N65M5 substitution

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STL11N65M5 datasheet

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 stl11n65m5.pdf pdf_icon

STL11N65M5

STL11N65M5 N-channel 650 V, 0.475 typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS @ Tj max. RDS(on) max ID 6 7 STL11N65M5 710 V 0.530 8.5 A 5 Extremely low RDS(on) 4 Low gate charge and input capacitance Excellent switching performance 1 12 TM 100% avalanche tested PowerFLAT 5x5... See More ⇒

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 stl11n4llf5.pdf pdf_icon

STL11N65M5

STL11N4LLF5 N-channel 40 V, 9.1 m typ., 15 A STripFET V Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL11N4LLF5 40 V 9.7 m 15 A Low gate charge Very low on-resistance PowerFLAT 3.3x3.3 High avalance ruggedeness Applications Switching applications Description Figure 1. Internal schemat... See More ⇒

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 stl11n3llh6.pdf pdf_icon

STL11N65M5

STL11N3LLH6 N-channel 30 V, 0.006 , 11 A PowerFLAT (3.3 x 3.3) STripFET VI DeepGATE Power MOSFET Features RDS(on) Order code VDSS ID max. STL11N3LLH6 30 V 0.0075 11 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power... See More ⇒

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 stl110n10f7.pdf pdf_icon

STL11N65M5

STL110N10F7 N-channel 100 V, 0.005 typ., 107 A, STripFET H7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 0.006 STL110N10F7 100 V 107 A 136 W (VGS= 10 V) 1 2 Among the lowest RDS(on) on the market 3 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche... See More ⇒

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Detailed specifications: STK850, STL100N10F7, STL100NH3LL, STL105NS3LLH7, STL10N60M2, STL110N10F7, STL110NS3LLH7, STL11N4LLF5, AON7506, STL120N2VH5, STL120N4F6AG, STL12N3LLH5, STL12N60M2, STL12N65M2, STL12P6F6, STL130N8F7, STL13DP10F6

Keywords - STL11N65M5 MOSFET specs

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