All MOSFET. STL11N65M5 Datasheet

 

STL11N65M5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL11N65M5
   Marking Code: 11N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: POWERFLAT5X5

 STL11N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL11N65M5 Datasheet (PDF)

 ..1. Size:1036K  st
 stl11n65m5.pdf

STL11N65M5 STL11N65M5

STL11N65M5N-channel 650 V, 0.475 typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production dataFeaturesOrder code VDS @ Tj max. RDS(on) max ID67STL11N65M5 710 V 0.530 8.5 A5 Extremely low RDS(on) 4 Low gate charge and input capacitance Excellent switching performance 112TM 100% avalanche testedPowerFLAT 5x5

 8.1. Size:1174K  st
 stl11n4llf5.pdf

STL11N65M5 STL11N65M5

STL11N4LLF5N-channel 40 V, 9.1 m typ., 15 A STripFETV Power MOSFET in a PowerFLAT 3.3 x 3.3 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL11N4LLF5 40 V 9.7 m 15 A Low gate charge Very low on-resistancePowerFLAT 3.3x3.3 High avalance ruggedenessApplications Switching applicationsDescriptionFigure 1. Internal schemat

 8.2. Size:489K  st
 stl11n3llh6.pdf

STL11N65M5 STL11N65M5

STL11N3LLH6N-channel 30 V, 0.006 , 11 A PowerFLAT (3.3 x 3.3)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL11N3LLH6 30 V 0.0075 11 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power

 9.1. Size:1029K  st
 stl110n10f7.pdf

STL11N65M5 STL11N65M5

STL110N10F7N-channel 100 V, 0.005 typ., 107 A, STripFET H7 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max ID PTOT0.006 STL110N10F7 100 V 107 A 136 W(VGS= 10 V)12 Among the lowest RDS(on) on the market34 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche

 9.2. Size:695K  st
 stl110ns3llh7.pdf

STL11N65M5 STL11N65M5

STL110NS3LLH7N-channel 30 V, 0.0027 typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6Datasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL110NS3LLH7 30 V 0.0034 120 A Very low on-resistance1 Very low Qg234 High avalanche ruggedness Embedded Schottky diodePowerFLAT5x6Applications Switchin

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top