STL220N3LLH7 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL220N3LLH7
Marking Code: 220N3LL7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 46 nC
trⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 2400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: POWERFLAT5X6
STL220N3LLH7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL220N3LLH7 Datasheet (PDF)
stl220n3llh7.pdf
STL220N3LLH7N-channel 30 V, 0.00081 typ., 50 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL220N3LLH7 30 V 0.0011 50 A Very low on-resistance1 Very low Qg234 High avalanche ruggednessPowerFLAT5x6Applications Switching applicationsDescriptionFigure
stl22n65m5.pdf
STL22N65M5N-channel 650 V, 0.180 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL22N65M5 710 V 0.210 15 A(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV Low
stl22nf10.pdf
STL22NF10N-CHANNEL 100V - 0.055 - 22A PowerFLATLOW GATE CHARGE STripFET II MOSFETTYPE VDSS RDS(on) IDSTL22NF10 100 V
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