All MOSFET. 2SJ531 Datasheet

 

2SJ531 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ531

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220F

2SJ531 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ531 Datasheet (PDF)

1.1. 2sj531.pdf Size:88K _renesas

2SJ531
2SJ531

2SJ531 Silicon P Channel MOS FET REJ03G0881-0300 (Previous: ADE-208-646A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.1. 2sj537.pdf Size:136K _toshiba

2SJ531
2SJ531

2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSVI) 2SJ537 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.16 ? (typ.) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : I = -100 µA (V = -50 V) DSS DS Enhancement-mode : Vth = -0.8~-2.0 V

5.2. 2sj535.pdf Size:89K _renesas

2SJ531
2SJ531

2SJ535 Silicon P Channel MOS FET REJ03G0885-0400 (Previous: ADE-208-627B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2

 5.3. 2sj534.pdf Size:88K _renesas

2SJ531
2SJ531

2SJ534 Silicon P Channel MOS FET REJ03G0884-0500 (Previous: ADE-208-589C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2

5.4. rej03g0886 2sj539ds.pdf Size:101K _renesas

2SJ531
2SJ531

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.5. rej03g0880 2sj530lsds.pdf Size:108K _renesas

2SJ531
2SJ531

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. 2sj532.pdf Size:88K _renesas

2SJ531
2SJ531

2SJ532 Silicon P Channel MOS FET REJ03G0882-0400 (Previous: ADE-208-653B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.7. rej03g0884 2sj534ds.pdf Size:102K _renesas

2SJ531
2SJ531

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. 2sj539.pdf Size:88K _renesas

2SJ531
2SJ531

2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 (Previous: ADE-208-657A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

5.9. 2sj533.pdf Size:88K _renesas

2SJ531
2SJ531

2SJ533 Silicon P Channel MOS FET REJ03G0883-0400 (Previous: ADE-208-649B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.10. 2sj530.pdf Size:95K _renesas

2SJ531
2SJ531

2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 ? typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package nam

5.11. rej03g0885 2sj535ds.pdf Size:102K _renesas

2SJ531
2SJ531

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: 2SJ506 , 2SJ517 , 2SJ518 , 2SJ526 , 2SJ527 , 2SJ528 , 2SJ529 , 2SJ530 , IRFP260M , 2SJ532 , 2SJ533 , 2SJ534 , 2SJ535 , 2SJ539 , 2SJ540 , 2SJ541 , 2SJ542 .

 
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