STL8DN6LF3 Datasheet. Specs and Replacement

Type Designator: STL8DN6LF3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: POWERFLAT5X6

STL8DN6LF3 substitution

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STL8DN6LF3 datasheet

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STL8DN6LF3

STL8DN6LF3 Dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in PowerFLAT 5x6 double island package Datasheet production data Features RDS(on) Order code VDSS ID max STL8DN6LF3 60 V ... See More ⇒

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STL8DN6LF3

STL8DN4LLF6 Dual N-channel 40 V, 0.025 typ., 8 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - target specification Features Order code VDS RDS(on)max ID 0.03 (VGS=10 V) STL8DN4LLF6 40 V 8 A 0.05 (VGS=4.5 V) Very low on-resistance High avalanche ruggedness PowerFLAT 5x6 double island Applications Switching ... See More ⇒

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STL8DN6LF3

STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package Datasheet production data Features Order code VDS RDS(on) max ID STL8DN10LF3 100 V 35 m 7.8 A Designed for automotive applications and 1 2 AEC-Q101 qualified 3 4 Logic level VGS(th) PowerFLAT 5x6 175 C junction... See More ⇒

Detailed specifications: STL75NH3LL, STL7DN6LF3, STL7N10F7, STL7N6LF3, STL7N80K5, STL86N3LLH6AG, STL8DN10LF3, STL8DN4LLF6, IRF9540, STL8N10F7, STL8N10LF3, STL8N80K5, STL8NH3LL, STL8P2UH7, STL8P4LLF6, STL90N10F7, STL9N60M2

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