STL9N60M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL9N60M2
Marking Code: 9N60M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm
Package: POWERFLAT5X6HV
STL9N60M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL9N60M2 Datasheet (PDF)
stl9n60m2.pdf
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