STL9N60M2 Datasheet. Specs and Replacement
Type Designator: STL9N60M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm
Package: POWERFLAT5X6HV
STL9N60M2 substitution
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STL9N60M2 datasheet
stl9n60m2.pdf
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STL9N3LLH5 N-channel 30 V, 0.015 , 9 A, PowerFLAT (3.3x3.3) STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STL9N3LLH5 30 V ... See More ⇒
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Detailed specifications: STL8DN6LF3, STL8N10F7, STL8N10LF3, STL8N80K5, STL8NH3LL, STL8P2UH7, STL8P4LLF6, STL90N10F7, AO3401, STL9P2UH7, STV160NF02LAT4, STV160NF02LT4, STV160NF03LAT4, STV160NF03LT4, STV200N55F3, STV60NE06-16, STW10N105K5
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