STW10NA50 Datasheet. Specs and Replacement
Type Designator: STW10NA50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-247
STW10NA50 substitution
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STW10NA50 datasheet
stw10na50.pdf
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STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V ... See More ⇒
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Detailed specifications: STV160NF02LAT4, STV160NF02LT4, STV160NF03LAT4, STV160NF03LT4, STV200N55F3, STV60NE06-16, STW10N105K5, STW10N95K5, 5N65, STW11NB80, STW12NA60, STW12NM60N, STW13N60M2, STW13N80K5, STW13NB60, STW13NK80Z, STW13NM50N
Keywords - STW10NA50 MOSFET specs
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