STW20NB50 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW20NB50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-247
STW20NB50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW20NB50 Datasheet (PDF)
stw20nb50.pdf
STW20NB50N - CHANNEL 500V - 0.22 - 20A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW20NB50 500 V
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stw20nm50.pdf
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stw20nc50.pdf
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stw20na50.pdf
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stw20nm65n.pdf
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stw20nm60.pdf
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stp20nk50z stw20nk50z.pdf
STP20NK50Z - STW20NK50ZN-CHANNEL 500V - 0.23 - 20A TO-220/TO-247Zener-Protected SuperMESHPower MOSFETTARGET DATATYPE VDSS RDS(on) ID PwSTP20NK50Z 500 V
stw20nk70z.pdf
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stw20nm50fd.pdf
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stw20nm60fd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM60FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)
stw20nm50fd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM50FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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