STW21NM50N Specs and Replacement
Type Designator: STW21NM50N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-247
STW21NM50N substitution
- MOSFET ⓘ Cross-Reference Search
STW21NM50N datasheet
stw21nm50n.pdf
STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 3 2 2 1 1 STB21NM50N 550V ... See More ⇒
stp21nm50n stf21nm50n stb21nm50n stb21nm50n-1 stw21nm50n.pdf
STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 3 2 2 1 1 STB21NM50N 550V ... See More ⇒
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 3 2 1 2 1 STB21NM60N 650 V ... See More ⇒
stb21nm60n-1 stb21nm60n stf21nm60n stp21nm60n stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 3 2 1 2 1 STB21NM60N 650 V ... See More ⇒
Detailed specifications: STW18NM60ND, STW19NM60N, STW19NM65N, STW200NF03, STW20N65M5, STW20NB50, STW20NK70Z, STW20NM65N, 75N75, STW21NM60N, STW220NF75, STW22N95K5, STW23N85K5, STW23NM60N, STW24N60DM2, STW24N60M2, STW25N80K5
Keywords - STW21NM50N MOSFET specs
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