STW30NM60ND MOSFET. Datasheet pdf. Equivalent

   Type Designator: STW30NM60ND
   Marking Code: 30NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-247

STW30NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STW30NM60ND Datasheet (PDF)

..1. Size:792K st
stw30nm60nd stp30nm60nd stf30nm60nd sti30nm60nd stb30nm60nd.pdf

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

..2. Size:789K st
stf30nm60nd stp30nm60nd stw30nm60nd.pdf

4.1. Size:770K st
stb30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

4.2. Size:766K st
stb30nm60n sti30nm60n stf30nm60n stp30nm60n stw30nm60n.pdf