All MOSFET. STW56N65M2-4 Datasheet

 

STW56N65M2-4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW56N65M2-4
   Marking Code: 56N65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 358 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 27.5 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TO-247-4

 STW56N65M2-4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW56N65M2-4 Datasheet (PDF)

 ..1. Size:699K  st
 stw56n65m2-4.pdf

STW56N65M2-4 STW56N65M2-4

STW56N65M2-4N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge4 Excellent output capacitance (Coss) profile 32 100% avalanche tes

 4.1. Size:724K  st
 stw56n65m2.pdf

STW56N65M2-4 STW56N65M2-4

STW56N65M2N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTW56N65M2 650 V 0.062 49 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested32 Zener-protected1ApplicationsTO-247 Switching applicationsFigure

 6.1. Size:596K  st
 stw56n65dm2.pdf

STW56N65M2-4 STW56N65M2-4

STW56N65DM2 N-channel 650 V, 0.058 typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STW56N65DM2 650 V 0.065 48 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extre

 7.1. Size:907K  st
 stw56n60m2-4.pdf

STW56N65M2-4 STW56N65M2-4

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%

 7.2. Size:676K  st
 stw56n60m2.pdf

STW56N65M2-4 STW56N65M2-4

STW56N60M2N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 32 100% avalanche tested1 Zener-protectedTO-247Applications Switching application

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTTFS5C670NL | 2SK1888 | AOW12N60 | NDC651N | CPH3351

 

 
Back to Top