All MOSFET. STY145N65M5 Datasheet

 

STY145N65M5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STY145N65M5

SMD Transistor Code: 145N65M5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 625 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 138 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 414 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 413 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: MAX247

STY145N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STY145N65M5 Datasheet (PDF)

1.1. sty145n65m5.pdf Size:782K _update

STY145N65M5
STY145N65M5

STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh™ V Power MOSFET in Max247 package Datasheet — preliminary data Features VDSS Order code @TJmax RDS(on) max ID STY145N65M5 710 V < 0.015 Ω 138 A ■ Max247 worldwide best RDS(on) ■ Higher VDSS rating 3 2 ■ Higher dv/dt capability 1 ■ Excellent switching performance Max247 ■ Easy to drive ■ 100% avalanche

5.1. sty140ns10.pdf Size:257K _st2

STY145N65M5
STY145N65M5

STY140NS10 N-CHANNEL 100V - 0.009 ? - 140A MAX247 MESH OVERLAY POWER MOSFET TYPE VDSS RDS(on) ID STY140NS10 100V <0.011? 140A TYPICAL RDS(on) = 0.009? STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced 3 family of power MOSFETs with outstanding 2 1 performances. The new paten

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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