MCP87090 Specs and Replacement

Type Designator: MCP87090

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.3 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: PDFN3.3X3.3 PDFN5X6

MCP87090 substitution

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MCP87090 datasheet

 ..1. Size:942K  microchip
 mcp87090.pdf pdf_icon

MCP87090

MCP87090 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technol... See More ⇒

 8.1. Size:616K  microchip
 mcp87055.pdf pdf_icon

MCP87090

MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processing Charge (QGD) technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista... See More ⇒

 8.2. Size:668K  microchip
 mcp87050.pdf pdf_icon

MCP87090

MCP87050 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allow Charge (QGD) the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga... See More ⇒

 8.3. Size:606K  microchip
 mcp87030.pdf pdf_icon

MCP87090

MCP87030 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allow the MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga... See More ⇒

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Detailed specifications: MCH6664, MCP04N60, MCP04N65, MCP87018, MCP87022, MCP87030, MCP87050, MCP87055, IRLB3034, MCP87130, MCPF04N60, MCPF04N65, MCPF05N60B, MCPF08N60, MCQ4822, MCU01N80, MCU02N80

Keywords - MCP87090 MOSFET specs

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