MCQ4822 Datasheet and Replacement
Type Designator: MCQ4822
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP-8
- MOSFET Cross-Reference Search
MCQ4822 Datasheet (PDF)
mcq4822.pdf

M C CTMMicro Commercial Components Micro Commercial Components20736 Marilla Street Chatsworth MCQ4822CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"N-Channel High power and current handing capability Lead free product is acquiredEnhancement Mode Surface mount packageField Effect Trans
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT
Keywords - MCQ4822 MOSFET datasheet
MCQ4822 cross reference
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History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT



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