MFE960 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MFE960
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO-205AD

MFE960 Transistor Equivalent Substitute - MOSFET Cross-Reference Search