MFE960 Specs and Replacement

Type Designator: MFE960

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: TO-205AD

MFE960 substitution

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MFE960 datasheet

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MFE960

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Detailed specifications: MCQ4822, MCU01N80, MCU02N80, MCU04N60, MCU04N65, MCU05N60, ME3587-G, MFE930, IRFZ44N, MFE990, MGSF1N02ELT1, SP8K24FRA, SP8K31FRA, SP8K33FRA, SP8K80, SP8M10FRA, SP8M21FRA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.