SP8K31FRA
MOSFET. Datasheet pdf. Equivalent
Type Designator: SP8K31FRA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.7
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12
Ohm
Package:
SOP-8
SP8K31FRA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SP8K31FRA
Datasheet (PDF)
..1. Size:946K rohm
sp8k31fra.pdf
SP8K31FRASP8K31TransistorAEC-Q101 Qualified4V Drive Nch+Nch MOSFETSP8K31SP8K31FRA Dimensions (Unit : mm) Structure SOP8Silicon N-channel MOSFET Features1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). ApplicationsEach lead has same dimensionsSwitching Equivalent circuit Packaging dimensions (8) (7) (6) (5) (8) (7) (6) (5)Packa
8.1. Size:953K cn vbsemi
sp8k31-tb.pdf
SP8K31-TBwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe
9.1. Size:946K rohm
sp8k33fra.pdf
SP8K33FRASP8K33Transistors AEC-Q101 Qualified4V Drive Nch+Nch MOSFETSP8K33FRASP8K33 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit(8) (7) (6) (5
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.