SP8K31FRA Specs and Replacement
Type Designator: SP8K31FRA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOP-8
SP8K31FRA substitution
- MOSFET ⓘ Cross-Reference Search
SP8K31FRA datasheet
sp8k31fra.pdf
SP8K31FRA SP8K31 Transistor AEC-Q101 Qualified 4V Drive Nch+Nch MOSFET SP8K31 SP8K31FRA Dimensions (Unit mm) Structure SOP8 Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Applications Each lead has same dimensions Switching Equivalent circuit Packaging dimensions (8) (7) (6) (5) (8) (7) (6) (5) Packa... See More ⇒
sp8k31-tb.pdf
SP8K31-TB www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe... See More ⇒
sp8k33fra.pdf
SP8K33FRA SP8K33 Transistors AEC-Q101 Qualified 4V Drive Nch+Nch MOSFET SP8K33FRA SP8K33 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5... See More ⇒
Detailed specifications: MCU04N65, MCU05N60, ME3587-G, MFE930, MFE960, MFE990, MGSF1N02ELT1, SP8K24FRA, 20N60, SP8K33FRA, SP8K80, SP8M10FRA, SP8M21FRA, SP8M51, SP8M70, SP8M8FRA, SPB100N03S2
Keywords - SP8K31FRA MOSFET specs
SP8K31FRA cross reference
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SP8K31FRA replacement
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