All MOSFET. SPC1018 Datasheet

 

SPC1018 Datasheet and Replacement


   Type Designator: SPC1018
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOP-8P
 

 SPC1018 substitution

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SPC1018 Datasheet (PDF)

 ..1. Size:292K  syncpower
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SPC1018

SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1810 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.1. Size:266K  syncpower
spc1016.pdf pdf_icon

SPC1018

SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1016 is the Dual P-Channel enhancement mode Portable Equipment power field effect transistors are produced using high cell Battery Powered System density , DMOS trench technology. This high density DC/DC Converter process is especially tailored to minimize on-state

 9.1. Size:909K  cn sinai power
spc10n65g.pdf pdf_icon

SPC1018

SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App

 9.2. Size:821K  cn sinai power
spc10n80g.pdf pdf_icon

SPC1018

SPC10N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.2DS(on) GS Ultra Low Gate Charge Q max. (nC) 70 g Improved dv/dt Capability Q (nC) 14 gs 100% Avalanche Tested Q (nC) 21 gd RoHS compliant Configuration single A

Datasheet: SP8M21FRA , SP8M51 , SP8M70 , SP8M8FRA , SPB100N03S2 , SPB42N03S2L-13 , SPB80N03S2 , SPC1016 , IRF3710 , SPC4516 , SPC4516B , SPC4527 , SPC4533 , SPC4533W , SPC4539 , SPC4539B , SPC4567 .

History: AM5829P | HGN090N06SL | APT6011B2VFRG | SLF70R420S2 | NTMFS0D55N03CG | 5N65KG-TMS-T | VBM17R10

Keywords - SPC1018 MOSFET datasheet

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