SQ1912EEH Specs and Replacement
Type Designator: SQ1912EEH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 23 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SOT-363
SQ1912EEH substitution
- MOSFET ⓘ Cross-Reference Search
SQ1912EEH datasheet
sq1912eeh.pdf
SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 4.5 V 0.280 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 2.5 V 0.360 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 1.8 V 0.450 100 % Rg Tested ID (A) 0.8 Ty... See More ⇒
sq1912eh.pdf
SQ1912EH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET FEATURES SOT-363 TrenchFET power MOSFET SC-70 Dual (6 leads) S2 AEC-Q101 qualified 4 G2 100 % Rg tested 5 D1 Material categorization 6 for definitions of compliance please see www.vishay.com/doc?99912 3 D2 2 G1 1 S1 D1 D2 Top View Marking Code 9H PRODUC... See More ⇒
sq1912aeeh.pdf
SQ1912AEEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 20 AEC-Q101 qualified RDS(on) ( ) at VGS = 4.5 V 0.280 100 % Rg tested RDS(on) ( ) at VGS = 2.5 V 0.360 Typical ESD protection 800 V RDS(on) ( ) at VGS = 1.8 V 0.450 ID (A) 0.8 Material categorization f... See More ⇒
Detailed specifications: SQ1421EEH, SQ1431EH, SQ1470AEH, SQ1470EH, SQ1539EH, SQ1563AEH, SQ1902AEL, SQ1912AEEH, 75N75, SQ2301ES, SQ2303ES, SQ2308BES, SQ2308CES, SQ2308ES, SQ2309ES, SQ2310ES, SQ2315ES
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