SQ2309ES Specs and Replacement

Type Designator: SQ2309ES

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.335 Ohm

Package: TO-236

SQ2309ES substitution

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SQ2309ES datasheet

 ..1. Size:218K  vishay
 sq2309es.pdf pdf_icon

SQ2309ES

SQ2309ES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.335 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.500 100 % Rg and UIS Tested ID (A) - 1.7 Compliant to RoHS Directive 2... See More ⇒

 9.1. Size:224K  vishay
 sq2308bes.pdf pdf_icon

SQ2309ES

SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.170 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 4.5 V 0.220 100 % Rg and UIS Tested ID (A) 2.3 Compliant to RoHS Directive 2002/95/... See More ⇒

 9.2. Size:108K  vishay
 sq2308es.pdf pdf_icon

SQ2309ES

SQ2308ES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.155 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.205 Compliant to RoHS Directive 2002/95/EC ID (A) 2.3 AEC-Q101 Qualifiedc Configuration Single Find out more a... See More ⇒

 9.3. Size:217K  vishay
 sq2303es.pdf pdf_icon

SQ2309ES

SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 30 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.170 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.370 100 % Rg and UIS Tested ID (A) - 2.5 Compliant to RoHS Directive 2... See More ⇒

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Detailed specifications: SQ1902AEL, SQ1912AEEH, SQ1912EEH, SQ2301ES, SQ2303ES, SQ2308BES, SQ2308CES, SQ2308ES, IRFZ48N, SQ2310ES, SQ2315ES, SQ2318AES, SQ2318ES, SQ2319ES, SQ2325ES, SQ2328ES, SQ2337ES

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.