All MOSFET. SQ2318AES Datasheet

 

SQ2318AES Datasheet and Replacement


   Type Designator: SQ2318AES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO-236
 

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SQ2318AES Datasheet (PDF)

 ..1. Size:255K  vishay
 sq2318aes.pdf pdf_icon

SQ2318AES

SQ2318AESwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.031 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.036 Material categorization:ID (A) 8For definitions of compliance please see Configuration Singleww

 8.1. Size:219K  vishay
 sq2318es.pdf pdf_icon

SQ2318AES

SQ2318ESwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.040 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 AEC-Q101 QualifiedcID (A) 6 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS

 9.1. Size:109K  vishay
 sq2319es.pdf pdf_icon

SQ2318AES

SQ2319ESwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.075 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.145 AEC-Q101 QualifiedcID (A) - 4.6 100 % Rg and UIS TestedConfiguration Single Complia

 9.2. Size:219K  vishay
 sq2310es.pdf pdf_icon

SQ2318AES

SQ2310ESwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.030 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.034 AEC-Q101 QualifiedcRDS(on) () at VGS = 1.5 V 0.042 100 % Rg and UIS TestedID (A) 6 Co

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Datasheet: SQ2301ES , SQ2303ES , SQ2308BES , SQ2308CES , SQ2308ES , SQ2309ES , SQ2310ES , SQ2315ES , 60N06 , SQ2318ES , SQ2319ES , SQ2325ES , SQ2328ES , SQ2337ES , SQ2348ES , SQ2351ES , SQ2360EES .

History: FTK35N03PDFN56 | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K

Keywords - SQ2318AES MOSFET datasheet

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